Research on the Technology of 4 in HgCdTe on Silicon Substrate by Molecular Beam Epitaxy

Da GAO; Zhen LI; Cong WANG; Jing-Wei WANG; Ming LIU; Ti NING

doi:10.3969/j.issn.1672-8785.2021.03.002

Journals >INFRARED >Volume 42 >Issue 3 >Page 6 > Article

INFRARED
Vol. 42, Issue 3, 6 (2021)

Research on the Technology of 4 in HgCdTe on Silicon Substrate by Molecular Beam Epitaxy

Da GAO^*, Zhen LI, Cong WANG, Jing-Wei WANG, Ming LIU, and Ti NING

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[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2021.03.002 Cite this Article

GAO Da, LI Zhen, WANG Cong, WANG Jing-Wei, LIU Ming, NING Ti. Research on the Technology of 4 in HgCdTe on Silicon Substrate by Molecular Beam Epitaxy[J]. INFRARED, 2021, 42(3): 6 Copy Citation Text

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GAO Da, LI Zhen, WANG Cong, WANG Jing-Wei, LIU Ming, NING Ti. Research on the Technology of 4 in HgCdTe on Silicon Substrate by Molecular Beam Epitaxy[J]. INFRARED, 2021, 42(3): 6

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