• Chinese Journal of Lasers
  • Vol. 42, Issue s1, 102006 (2015)
Liao Yongping1、2、*, Zhang Yu1、2, Xing Junliang1、2, Yang Chengao1、2, Wei Sihang1、2, Hao Hongyue1、2, Xu Yingqiang1、2, and Niu Zhichuan1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/cjl201542.s102006 Cite this Article Set citation alerts
    Liao Yongping, Zhang Yu, Xing Junliang, Yang Chengao, Wei Sihang, Hao Hongyue, Xu Yingqiang, Niu Zhichuan. GaSb-Based Quantum Wells 2 μm High Power Laser Diode[J]. Chinese Journal of Lasers, 2015, 42(s1): 102006 Copy Citation Text show less

    Abstract

    By reducing the Al concentration in waveguide layer and optical confinement layer,stabilizing the epi-growth condition and combining with standard broad-area-laser processing technology,we obtain a continuous output power of 823 mW when working at 15 ℃,the peak wavelengh is 1.96 μm with 0.5 A injection current.In pulsed condition of 1000 Hz and 5% duty cycle, the maximum output power of about 1.86 W is gotten.
    Liao Yongping, Zhang Yu, Xing Junliang, Yang Chengao, Wei Sihang, Hao Hongyue, Xu Yingqiang, Niu Zhichuan. GaSb-Based Quantum Wells 2 μm High Power Laser Diode[J]. Chinese Journal of Lasers, 2015, 42(s1): 102006
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