Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector

Xiaoxia GONG; Tingting XIAO; Ruiyu YANG; Bingzhe LI; Falan SHANG; Xiangle SUN; Yupeng ZHAO; Dongqiong CHEN; Wenyun YANG

Journals >Infrared Technology >Volume 42 >Issue 10 >Page 953 > Article

Infrared Technology
Vol. 42, Issue 10, 953 (2020)

Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector

Xiaoxia GONG^*, Tingting XIAO, Ruiyu YANG, Bingzhe LI, Falan SHANG, Xiangle SUN, Yupeng ZHAO, Dongqiong CHEN, and Wenyun YANG

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[in Chinese]

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DOI: Cite this Article

GONG Xiaoxia, XIAO Tingting, YANG Ruiyu, LI Bingzhe, SHANG Falan, SUN Xiangle, ZHAO Yupeng, CHEN Dongqiong, YANG Wenyun. Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector[J]. Infrared Technology, 2020, 42(10): 953 Copy Citation Text

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References

[4] Joseph Boisvert, Takahiro Isshiki, Rengarajan S, et al. Performance of very low dark current SWIR PIN arrays[C]//Pro. of SPIE, 2008, 6940:69400L-1.

[5] Hopkins F K, Boyd J T. Dark current analysis of InSb photodiodes[J].Infrared physics, 1984, 24(4): 391-395.

[6] Nott G J, Findlay P C, Crowder J G, et al. Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors[J]. Journal of Physics: Condensed Matter, 2000, 12(50): L731-L734.

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