• Acta Photonica Sinica
  • Vol. 33, Issue 12, 1461 (2004)
[in Chinese]1、2, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃[J]. Acta Photonica Sinica, 2004, 33(12): 1461 Copy Citation Text show less
    References

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    [4] Tsai C,Li KH,Sarathy J,et al.Thermal treatment studies of the photoluminescence intensity of porous silicon.Appl Phys Lett,1991,59(22):2814~2816

    [5] Prokes S M.Study of the luminescence in porous silicon structures.J Appl Phys, 1993,73(1): 407~413

    [6] Brandt M S,Fuchs D H, Stutzmann M,et al. The origin of visible luminescence from "porous silicon": A new interpretation.Solid State Commun,1992,81(4):307~312

    [7] Koch F,Petrova-Koch V,Muschik T. The luminescence of porous Si: the case for the surface state mechanism.J of Lumin, 1993,57(5):271~281

    [8] Qin G G,Jia Y Q.Mechanism of porous silicon.Solid State Commun, 1993,86(9):559~563

    [9] Kontkiewicz A J, Kontkiewicz A M, Siejka J, et al.Evidence that blue luminescence of oxidized porous silicon originates from SiO2. Appl Phys Lett, 1994,65(11):1436~1438

    [10] Xu Z Y, Gal M, Gross M.Photoluminescence studies on porous silicon.Appl Phys Lett, 1992,60(11): 1375~1377

    [11] Zheng X L,Wang W, Chen H C. Anomalous temperature dependencies of photoluminescence for visible-light-emitting porous Si.Appl Phys Lett,1992,60(8): 986~988

    [12] Zhang S L,Huang F M,Ho K S, et al. Two-peak photoluminescence and light-emitting mechanism of porous silicon.Phys Rev B, 1995,51(16):11194~11197

    [13] Filippov V V,Pershukevich P P, Kuznetsova V V, et al. Blue photoluminescence of oxidized films of porous silicon.J Appl Spectros,2000,67 (5):852~856

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃[J]. Acta Photonica Sinica, 2004, 33(12): 1461
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