Preparation of recombination-type GaAs materials for CW high power CO2 laser windows

Li Guanghua; Zhang Guoli

Journals >Chinese Journal of Lasers >Volume 9 >Issue 3 >Page 147 > Article

Chinese Journal of Lasers
Vol. 9, Issue 3, 147 (1982)

Preparation of recombination-type GaAs materials for CW high power CO₂ laser windows

Li Guanghua and Zhang Guoli

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[in Chinese]

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Li Guanghua, Zhang Guoli. Preparation of recombination-type GaAs materials for CW high power CO₂ laser windows[J]. Chinese Journal of Lasers, 1982, 9(3): 147 Copy Citation Text

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Abstract

The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). The material is of lower absorption coefficient, higher infrared transmittance and good thermal stability. It has been proved that this material can fully meet the requirements for CW highpower CO3 laser windows.

Li Guanghua, Zhang Guoli. Preparation of recombination-type GaAs materials for CW high power CO₂ laser windows[J]. Chinese Journal of Lasers, 1982, 9(3): 147

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