[1] Sciortino S, Cindro V, Hartjes F, et al. Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes[J]. Nuclear Inst & Methods in Physics Research A, 2005, 552(1): 138-145.
[2] Wu J, Lei J, Jiang Y, et al. Feasibility study of a SiC sandwich neutron spectrometer[J]. Nuclear Inst & Methods in Physics Research A, 2013, 708(708): 72-77.
[3] De Napoli M, Giacoppo F, Raciti G, et al. Study of charge collection efficiency in 4H-SiC Schottky diodes with 12C ions[J]. Nuclear Inst & Methods in Physics Research A, 2009, 608(1): 80-85.
[4] Seshadri S, Dulloo A R, Ruddy F H, et al. Demonstration of an SiC neutron detector for high-radiation environments[J]. IEEE Trans Electron Devices Ed, 1999, 46(3): 567-571.
[5] Park S H, Park J S, Seo H, et al. Development of SiC detector for the harsh environment applications[C]//IEEE Nuclear Science Symposium & Medical Imaging Conference. 2013.
[6] Kalinina E V, Strokan N B, Ivanov A M, et al. 4H-Si Chigh temperature spectrometers[C]//Materials Science Forum. 2007.
[7] Nava F, Vittone E, Vanni P, et al. Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays[J]. Nuclear Inst & Methods in Physics Research A, 2003, 514(1/3): 126-134.
[8] Kinoshita A, Iwami M, Kobayashi K I, et al. Radiation effect on pn-SiC diode as a detector[J]. Nuclear Inst & Methods in Physics Research A, 2005, 541(1): 213-220.
[11] Table of radioisotopes in radiation safety reference manual[EB/OL]. https: //www. vumc. org/safety/about/safety/safety/safety/rad.
[12] Sze S M. Physics of semiconductor devices[M]. 2nd ed. New Jersey: Wiley, 1981.
[14] Kang S M, Ha J H, Park S H, et al. Study of the current-voltage characteristics of a SiC radiation detector irradiated by Co-60 gamma-rays[J]. Nuclear Instruments & Methods in Physics Research, 2007, 579(1): 145-147.