• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Lei Niu1, Yimin Chen1、2、†, Xiang Shen1, and Tiefeng Xu1
Author Affiliations
  • 1Laboratory of Infrared Materials and Devices & Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Research Institute of Advanced Technology, Ningbo University, Ningbo 352, China
  • 2Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 31511, China
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    DOI: 10.1088/1674-1056/aba273 Cite this Article
    Lei Niu, Yimin Chen, Xiang Shen, Tiefeng Xu. Thermal stability of magnetron sputtering Ge–Ga–S films[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less
    Fitting results of Ψ and Δ for fresh Ge27.4Ga7.3S65.3 film by the Cauchy model. Two test angles (65° and 75°) are employed here.
    Fig. 1. Fitting results of Ψ and Δ for fresh Ge27.4Ga7.3S65.3 film by the Cauchy model. Two test angles (65° and 75°) are employed here.
    Linear refractive index at 1550 nm wavelength for the as-deposited films as a function of MCN.
    Fig. 2. Linear refractive index at 1550 nm wavelength for the as-deposited films as a function of MCN.
    The relationship between refractive index variation of Ge–Ga–S film and annealing time.
    Fig. 3. The relationship between refractive index variation of Ge–Ga–S film and annealing time.
    Optical band-gap energy for as-deposited films as a function of MCN.
    Fig. 4. Optical band-gap energy for as-deposited films as a function of MCN.
    Relationship between optical band-gap variation and annealing time of Ge–Ga–S films.
    Fig. 5. Relationship between optical band-gap variation and annealing time of Ge–Ga–S films.
    Film thickness variation as a function of annealing time.
    Fig. 6. Film thickness variation as a function of annealing time.
    Film composition (Ge/Ga/S)Film MCNFilm thickness/nm
    20.0/6.5/74.52.46351
    22.5/8.1/69.42.53344
    27.4/7.3/65.32.62507
    30.4/8.4/61.22.69289
    33.1/7.9/59.02.74242
    38.5/8.4/53.12.85450
    43.6/6.8/49.62.94488
    Table 1. Composition, MCN, and thickness of Ge–Ga–S deposited film.
    Lei Niu, Yimin Chen, Xiang Shen, Tiefeng Xu. Thermal stability of magnetron sputtering Ge–Ga–S films[J]. Chinese Physics B, 2020, 29(8):
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