[1] Riel B J. An introduction to self-assembled quantum dots. American Journal of Physics, 2008, 76(8): 750-757
[2] Uskov A V, Oreilly E P, Laemmlin M, Ledentsov N N, Bimberg D. On gain saturation in quantum dot semiconductor optical amplifiers. Optics Communications, 2005, 248(1-3): 211-219
[3] Tatebayashi J, Nishioka M, Arakaw Y. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor depositiona. Applied Physics Letters, 2001, 78(22): 3469-3471
[4] Saravanan S, Harayama T. Investigation of InxGa1 - xAs strain reducing layers effects on InAs/GaAs quantum dots. IEICE Electronics Express, 2008, 5(2): 53-59
[5] Liu H Y, Sellers I R, Badcock T J, Mowbray D J, Skolnick M S, Groom K M, Gutiérrez Hopkinson M, Ng J S, David J P R, Beanland R. Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. Applied Physics Letters, 2004, 85(5): 704-706
[6] Yin Z, Tang X, Liu W, Zhang D, Du A. Effects of InxGa1 - xAs matrix layer on InAs quantum dot formation and their emission wavelength. Journal of Applied Physics, 2006, 100(3): 033109
[7] Howe P, Le Ru E C, Clarke E, Abbey B, Murray R, Jones T S. Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dot. Journal of Applied Physics, 2004, 95(6): 2998-3004
[8] Ng J T, Bangert U, Missous M. Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures. Semiconductor Science and Technology, 2007, 22(2): 80-85
[9] Liang S, Zhu H L, Pan J Q, Hou L P,Wang W. Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD. Journal of Crystal Growth, 2005, 282(3-4): 297-304
[10] Kudryashov I V, Evtikhiev V P, Tokranov V E, Kotel'nikov E Yu, Kryganovskii A K, Titkov A N. Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots. Journal of Crystal Growth, 1999, 201/202: 1158-1160
