InAs/GaAs quantum dots grown on different GaAs substrates with graded InxGa1-xAs strain-reducing layer

Shuping FEI; Zhongwei SHI; Lirong HUANG

doi:10.1007/s12200-010-0109-6

Journals >Frontiers of Optoelectronics >Volume 3 >Issue 3 >Page 241 > Article

Frontiers of Optoelectronics
Vol. 3, Issue 3, 241 (2010)

InAs/GaAs quantum dots grown on different GaAs substrates with graded In_xGa_1-xAs strain-reducing layer

Shuping FEI, Zhongwei SHI, and Lirong HUANG^*

Author Affiliations

Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

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DOI: 10.1007/s12200-010-0109-6 Cite this Article

Shuping FEI, Zhongwei SHI, Lirong HUANG. InAs/GaAs quantum dots grown on different GaAs substrates with graded In_xGa_1-xAs strain-reducing layer[J]. Frontiers of Optoelectronics, 2010, 3(3): 241 Copy Citation Text

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Abstract

Self-assembled InAs quantum dots with graded composition strain-reducing layer (SRL) grown on exact substrates were studied. It is shown that a graded InxGa1-xAs SRL leads to growth quality improvement, emission efficiency enhancement, and wavelength blueshift. Samples grown on 2° misoriented substrates with different In contents in graded InxGa1 - xAs SRL were also investigated, and emission efficiency enhancement and wavelength blueshift were found when graded SRL was introduced and when the change rate of In content in graded InxGa1-xAs SRL was enlarged.

Keywords

gradient composition misoriented substrate quantum dots (QDs)strain-reducing layer (SRL)

Shuping FEI, Zhongwei SHI, Lirong HUANG. InAs/GaAs quantum dots grown on different GaAs substrates with graded In_xGa_1-xAs strain-reducing layer[J]. Frontiers of Optoelectronics, 2010, 3(3): 241

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