Study of Indium Bump Fabrication for Infrared Detector with 10 μm Pitch

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

doi:10.3969/j.issn.1672-8785.2022.01.002

Journals >INFRARED >Volume 43 >Issue 1 >Page 6 > Article

INFRARED
Vol. 43, Issue 1, 6 (2022)

Study of Indium Bump Fabrication for Infrared Detector with 10 μm Pitch

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2022.01.002 Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of Indium Bump Fabrication for Infrared Detector with 10 μm Pitch[J]. INFRARED, 2022, 43(1): 6 Copy Citation Text

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References

[7] She W L, Zhou L Q, Bruker Q B, et al. Manufacturing Application Study of CdZnTe Wafers Using Automated X-ray Metrology［C］. New York: Advanced Semiconductor Manufacturing Conference, 2018.

[8] Dahlin M J,O′Rourke E J. Advanced Focal Plane Array Systems for Next-Generation Scanning Remote Sensing Instrument［C］. SPIE, 2003, 4820： 406-417.

[9] Manissadjian A, Rubaldo L, Mollard L, et al. Improved IR Detectors to Swap Heavy Systems for SWaP［C］. SPIE, 2012, 8353: 835334.

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