Optical Properties of N-doped β-Ga2O3 Films Deposited by RF Magnetron Sputtering

YAN Jin-liang; ZHANG Yi-jun; LI Qing-shan; QU Chong; ZHANG li-ying; LI Ting

doi:10.3788/gzxb20114006.0852

[1] TIPPING H H. Optical absorption and photoconductivity in the band edge of β-Ga2O3 ［J］. Physical Review, 1965, 140(1A): 316-319.

[2] UEDA N, HOSONO H R, KAWAZOE H. Anisotropy of electrical and optical properties in β- Ga2O3 single crystals［J］. Applied Physics Letters, 1997, 71(7): 933-938.

[3] VILLORA E G, SHIMAMAURA K, AOKI K, et al. Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane β-Ga2O3［J］. Thin Solid Films, 2006, 500(1/2): 209-214.

[4] TOMM Y, KO J M, YOSHIKAWA A, et al. Floating zone growth of β- Ga2O3: a new window material for optoelectronic device applications［J］. Solar Energy Materials and solar Cells, 2001, 66(6): 369-475.

[5] SHIGEO O, NORIHITO S Z K, NAOKI A, et al. Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing［J］. Thin Solid Films, 2008, 516(17): 5763-5767.

[6] KIYOSHI S, ENACARNACION G, VILLORA, et al. Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals［J］. Applied Physics Letters, 2008, 92(20): 1914-1918.

[7] SUZUKI N, OHIRA S, TANAKA M, et al. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal［J］. Physica Status Solidi, 2007, 4(7): 2310-2315.

[8] LI X N, KEYES B, ASHER S, et al. Hydrogen passivation effect in nitrogen-doped ZnO thin films［J］. Applied Physics Letters, 2005, 86(12): 2107-2111.

[9] SCHULZ H, THIEMANN K.H. Crystal structure refinement of AlN and GaN［J］. Solid State Communication, 1977, 23(11): 815-820.

[10] TAKAKURA K, KOGA D, OBYAMA H, et al. Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements［J］. Physica B, 2009, 404(23/24): 4854-4857.

[11] VANDEDE W C G. Hydrogen as a cause of doping in zinc oxide［J］. Physical Review Letters, 2000, 85(5): 1012-1015.

[12] MARTIM M, FRED H P, MATHIAS K, DAN R. Burstein-Moss shift of N-doped In0.53Ga0.47As/In［J］. Physical Review B, 2001, 63(23): 3302-3305.

[13] BINET L, GURIER D. Luminescence of undoped β-Ga2O3 single crystals excited by picosecond X-ray and sub-picosecond UV pulses［J］. Journal of Physics and Chemistry of Solids, 1998, 59(2): 1241-1245.

[14] BLASSE G, BRIL A. Some observations on the luminescence of β-Ga2O3［J］. Journal of Physics and Chemistry of Solids, 1970, 31(8):707-712.