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    Journals >Infrared and Laser Engineering >Volume 36 >Issue 6 >Page 917 > Article
    • Infrared and Laser Engineering
    • Vol. 36, Issue 6, 917 (2007)
    UV photodetector based on AlGaN/GaN heterojunction
    [in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. UV photodetector based on AlGaN/GaN heterojunction[J]. Infrared and Laser Engineering, 2007, 36(6): 917 Copy Citation Text show less

    Abstract

    作者简介：李向阳(1969-),男,山东临清人,博士生导师,主任,主要从事窄禁带半导体红外、紫外探测器等方面的研究.Email:lixy@mail.sitp.ac.cn

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. UV photodetector based on AlGaN/GaN heterojunction[J]. Infrared and Laser Engineering, 2007, 36(6): 917
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