• Chinese Optics Letters
  • Vol. 4, Issue 1, 0127 (2006)
Kai Zheng*, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, and Xiaoyu Ma
Author Affiliations
  • National Engineering Research Center for Opto-Electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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    Kai Zheng, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, Xiaoyu Ma. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing[J]. Chinese Optics Letters, 2006, 4(1): 0127 Copy Citation Text show less
    References

    [1] N. Lichtenstein, R. Winterhoff, F. Scholz, H. Schweizer, S. Weiss, M. Hutter, and H. Reichl, IEEE J. Sel. Top. Quantum Electron. 6, 564 (2000).

    [2] K. Masumoto, I. Yamada, H. Tanaka, Y. Fujise, and K. Hashimoto, Lasers in Medical Science 18, 134 (2003).

    [3] M. Sagawa, K. Hiramoto, T. Toyonaka, T. Kikawa, S. Fujisaki, and K. Uomi, Electron. Lett. 32, 2277 (1996).

    [4] F. G. Gfeller, P. Buchmann, P. W. Epperiein, H. P. Meier, and J. P. Reithmaier, J. Appl. Phys. 72, 2131 (1992).

    [5] T. Shibutani, M. Kume, K. Hamada, H. Shimizu, K. Itoh, G. Kano, and I. Teramoto, IEEE J. Quantum Electron. 23, 760 (1987).

    [6] H. Hamada, M. Shono, S. Honda, R. Hiroyama, K. Matsukawa, K. Yodoshi, and T. Yamaguchi, Electron. Lett. 27, 661 (1991).

    [7] S. Kamiyama, Y. Mori, Y. Takahashi, and K. Ohnaka, Appl. Phys. Lett. 58, 2595 (1991).

    [8] H. Naito, M. Kume, K. Hamada, H. Shimizu, and G. Kano, IEEE J. Quantum Electron. 25, 1495 (1989).

    [9] J. E. Ungar, N. S. K. Kwong, S. W. Oh, J. S. Chen, and N. B. Chaim, Electron. Lett. 30, 1766 (1994).

    [10] A. Shima, H. Tada, K. Ono, M. Fujiwara, T. Utakouji, T. Kimura, M. Takemi, and H. Higuchi, IEEE Photon. Technol. Lett. 9, 413 (1997).

    [11] Y. Ueno, K. Endo, H. Fujii, K. Kobayashi, K. Hara, and T. Yuasa, Electron. Lett. 26, 1726 (1990).

    [12] K. Itaya, M. Ishikawa, G. Hatakoshi, and Y. Uematsu, IEEE J. Quantum Electron. 27, 1496 (1991).

    [13] H. C. Ko, M. W. Cho, J. H. Chang, and M. Yang, Appl. Phys. A 68, 467 (1999).

    [14] H. Hamada, M. Shono, S. Honda, R. Hiroyama, K. Yodoshi, and T. Yamaguchi, IEEE J. Quantum Electron. 27, 1483 (1991).

    [15] W. D. Laidig, N. Holonyak, M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Appl. Phys. Lett. 38, 776 (1981).

    [16] Y. Xu, Q. Cao, X. Zhu, G. Yang, Q. Gan, G. Song, L. Guo, Y. Li, and L. Chen, Chin. Opt. Lett. 2, 647 (2004).

    [17] I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).

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    Kai Zheng, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, Xiaoyu Ma. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing[J]. Chinese Optics Letters, 2006, 4(1): 0127
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