Fig. 1. Selective laser melting model and grid division
Fig. 2. Comparison of molten pool morphology and temperature field during single-layer deposition with different laser scanning speeds at the same position (laser power of 190 W). (a) (c) Scanning speed of 0.94 m/s; (b) (d) scanning speed of 1.25 m/s
Fig. 3. Flow field of liquid metal in molten pool of selective laser melting at different scanning speeds (laser power of 190 W). (a) Scanning speed of 0.94 m/s; (b) scanning speed of 1.25 m/s
Fig. 4. Comparison of molten pool morphology and temperature field during single-layer deposition with different laser powers at the same time (scanning speed of 0.94 m/s). (a) Laser power of 190 W; (b) laser power of 250 W
Fig. 5. Comparison of molten pool morphology and temperature field during single-layer deposition with different laser powers at the same time (scanning speed of 1.25 m/s). (a)(c) Laser power of 190 W; (b)(d) laser power of 250 W
Fig. 6. Flow field of liquid metal in molten pool of laser selective melting under different laser powers (scanning speed of 0.94 m/s). (a) Laser power of 190 W; (b) laser power of 250 W
Fig. 7. Variations of molten pool morphology and temperature field during multilayer deposition (laser power of 190 W and scanning speed of 1.08 m/s)
Fig. 8. Two-channel single-layer deposition topography with different energy densities. (a) Laser power of 195 W and scanning speed of 1.15 m/s; (b) laser power of 250 W and scanning speed 0.94 m/s
Fig. 9. Multi-channel deposition topography with different scanning distances. (a)(b) Laser power of 195 W, scanning speed of 1.15 m/s, and scanning distance of 80 μm; (c)(d) laser power of 195 W, scanning speed of 1.15 m/ s, and scanning distance of 110 μm
Fig. 10. Cross-sectional views of molten pool and pores at z=150 μm for multilayer deposition with different energy densities. (a)(b) Laser power of 120 W and scanning speed of 1 m/s; (c)(d) laser power of 80 W and scanning speed of 1.2 m/s
Fig. 11. Cross-sectional views of molten pool and pores at z=150 μm for monolayer deposition with different scanning distances. (a)-(c) Scanning distance h=80 μm; (d)-(f) scanning distance h=110 μm
Fig. 12. As-deposited microstructures of GH3536 alloy by selective laser melting. (a) Experimental result; (b) simulation result
No. | Laser power /W | Laser scan speed /(m·s-1) | Hatch spacing /µm | Powder layer thickness /μm |
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1 | 195 | 1.15 | 80 | 40 | 2 | 190 | 1.08 | 90 | 40 | 3 | 80 | 1.20 | 90 | 40 | 4 | 190 | 1.25 | 90 | 40 | 5 | 250 | 1.25 | 90 | 40 | 6 | 190 | 0.94 | 90 | 40 | 7 | 250 | 0.94 | 80 | 40 | 8 | 120 | 1.00 | 90 | 40 | 9 | 195 | 1.15 | 110 | 40 |
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Table 1. Process parameters used for selective laser melting (SLM) of GH3536
Thermophysical parameter | Value |
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Density /(kg·m-3) | 8248 | Solidus temperature /K | 1533 | Liquidus temperature /K | 1628 | Latent heat of fusion /(J·kg-1) | 2.76105 | Vaporization heat /(J·kg-1) | 6.45106 | Solid thermal conductivity /(W·m-1·K-1) | 0.7182+3.68×10-2T-8×10-6T2 | Liquid thermal conductivity /(W·m-1·K-1) | 29 | Solid specific heat /(J·kg-1·K-1) | 323.33+0.14T-0.5×10-6T2 | Specific heat of liquid /(J·kg-1·K-1) | 677 | Dynamic viscosity /(kg·m-1·s-1) | 5.4810-3 |
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Table 2. Thermophysical parameters of GH3536
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