• Chinese Journal of Lasers
  • Vol. 17, Issue 3, 159 (1990)
[in Chinese]1, [in Chinese]1, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Visible AIGaAs TS semiconductor laser with a large optical cavity[J]. Chinese Journal of Lasers, 1990, 17(3): 159 Copy Citation Text show less

    Abstract

    Visible AlGaAs terraced substrate semiconductor lasers with a large optical cavity has been fabricated. Its wavelength ranges from 717.2nm to 770.0nm, threshold current is 300mA at room temperature CW operation. It operates with a single mode at 1.5 times threshold. Some of the electrical and optical properties of the device are given.
    [in Chinese], [in Chinese], [in Chinese]. Visible AIGaAs TS semiconductor laser with a large optical cavity[J]. Chinese Journal of Lasers, 1990, 17(3): 159
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