• High Power Laser and Particle Beams
  • Vol. 35, Issue 9, 091008 (2023)
Yufei Zhao1、2, Cunzhu Tong2、*, and Zhipeng Wei1、*
Author Affiliations
  • 1Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022 , China
  • 2State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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    DOI: 10.11884/HPLPB202335.230127 Cite this Article
    Yufei Zhao, Cunzhu Tong, Zhipeng Wei. Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining[J]. High Power Laser and Particle Beams, 2023, 35(9): 091008 Copy Citation Text show less
    Experimental setup diagram of sum frequency generation of semiconductor laser based on V-shaped spectral beam combining
    Fig. 1. Experimental setup diagram of sum frequency generation of semiconductor laser based on V-shaped spectral beam combining
    Experimental result
    Fig. 2. Experimental result
    Power of the blue output beam generated by SFG and characteristics spectral of the sum frequency generation
    Fig. 3. Power of the blue output beam generated by SFG and characteristics spectral of the sum frequency generation
    central wavelength/nmcavity length/mmemitter width/μmΘfast 95% power content/(°) Θslow 95% power content/(°) front facet reflectivityrear facet reflectivity/%degree of TE polarization/%
    808312075152.5%95>95
    Table 1. Structure parameters of the diode lasers used
    Yufei Zhao, Cunzhu Tong, Zhipeng Wei. Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining[J]. High Power Laser and Particle Beams, 2023, 35(9): 091008
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