InGaAs-MSM Photodetector with Low Dark Current

YAN Xin; WANG Tao; YIN Fei; NI Hai-qiao; NIU Zhi-chuan; XIN Li-wei; TIAN Jin-shou

doi:10.3788/gzxb20154406.0604002

[1] YU Yi-chuan,ZOU Yong-zhuo,HE Jian-jun,et al.Analysis and optimization of MSM-PD′s characteristics using a two dimensional numerical method[J].Acta Photonica Sinica,2006,35(3):347-351.

[2] ZHONG Shu-quan,HUANG Yong-qing,WANG Qi,et al.Process conditions optimization and compound semiconductor materials growth for InP-based optoelectronic devices[J].Acta Photonica Sinica,2008,37(Supplement):41-45.

[3] ZHU Ya-qi,CHEN Zhi-ming,LU Shu-long,et al.Characterization of the lattice mismatched In0.68Ga0.32As material grown on InP substrate by MOCVD [J].Journal of Infrared and Millimeter Waves,2013,32(2):118-121.

[4] FANG X,GU Y,CHEN X Y,et al.InP-based InxGa1-xAs metamorphic buffers with different mismatched grading rates [J].Journal of Semiconductors,2013,34(7):073005-1-4.

[5] LIN S D,LEE C P.Hole Schottky barrier height enhancement and its application to metal–semiconductor–metal photodetectors [J].Journal of Applied Physics,2001,90(11):5666-5669.

[6] YUAN Yuan-lin,YAO Chang-sheng,WANG Guo,et al.The influence of SiO2 layer passivation on the leakage current of GaN-based PIN radiation detectors [J].Research & Progress of Solid State Electronics,2012,32(2):110-114.

[7] WANG Hai-xiao,ZHENG Xin-he,WEN Yu,et al.The design of 1 eV band-gap of GaNAs/InGaAs short-period super-lattice solar cell [J].Science China Physics,Mechanics & Astronomy,2013,43(8):930-935.

[8] WANG Kai,ZHANG Yong-gang,GU Yi,et al.Improving the performance of extended wavelength InGaAs photodetectors by using digital graded hetero interfaces superlattice [J].Journal of Infrared and Millimeter Waves,2009,28(6):405-409.

[9] ZHOU Yi,CHEN Jian-xin,XU Qing-qing,et al.Long wavelength infrared detector based on type-II InAs/GaSb superlattice [J].Journal of Infrared and Millimeter Waves,2013,32(3):210-213.

[11] CHEN Y P,YUKI I,OSAMU I,et al.Waveguide InGaAs photodetector with Schottky barrier enhancement layer on Ⅲ-Ⅴ CMOS photonics [C].Indium Phosphide and Related Materials,26th International Conference on,2014:1-2.

[12] ZHANG Yong-gang,SHAN Hong-kun,ZHOU Ping,et al.InGaAs MSM photodetectors with InP:Fe barrier enhancement layer[J].Acta Photonica Sinica,1995,24(3):223-225.

[13] JOOST B,GUNTHER R,DRIES V T.Photo-spectrometer based on the integration of InP/InGaAs photodetectors onto a Silicon-on-insulator etched diffraction grating[C].6th UGent-FirW PhD symposium,2005,24:1-2.

[15] TAN Hua,SHI Chang-xin,WANG Sen-zhang.Theoretical calculation of the dark current in MSM-PD with a barrier-enhancement layer [J].Research & Progress of Solid State Electronics,1998,18:176-180.