• Bulletin of the Chinese Ceramic Society
  • Vol. 43, Issue 1, 312 (2024)
ZHANG Xifei, CHEN Ding*, GU Huazhi, HUANG Ao, and FU Lvping
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  • [in Chinese]
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    DOI: Cite this Article
    ZHANG Xifei, CHEN Ding, GU Huazhi, HUANG Ao, FU Lvping. Effects of Carbon Sources on Properties of Reaction-Bonded Silicon Carbide[J]. Bulletin of the Chinese Ceramic Society, 2024, 43(1): 312 Copy Citation Text show less

    Abstract

    The carbon black and graphite were used as carbon sources to fabricate reaction-bonded SiC, and the total content of carbon sources was 10% (mass fraction, the same below). The effects of different ratios of carbon black and graphite on properties of reaction-bonded SiC were investigated. The results show that the reaction-bonded SiC with 4% carbon black and 6% graphite has good mechanical properties, the flexural strength and fracture toughness reach to 251.7 MPa and 4.29 MPa·m1/2. The mineral composition of reaction-bonded SiC was measured by XRD, the Rietveld simulation results of XRD patterns were adopted to measure phase content. The free Si content in reaction-bonded SiC with 4% carbon black and 6% graphite is 24.44% (mass fraction). The free Si content in reaction-bonded SiC with 10% graphite reaches to 28.57% (mass fraction), which is higher than that of the former. The decrease of free Si contributes to the improvement of mechanical properties of reaction-bonded SiC.
    ZHANG Xifei, CHEN Ding, GU Huazhi, HUANG Ao, FU Lvping. Effects of Carbon Sources on Properties of Reaction-Bonded Silicon Carbide[J]. Bulletin of the Chinese Ceramic Society, 2024, 43(1): 312
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