• Chinese Journal of Lasers
  • Vol. 32, Issue 1, 35 (2005)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of Intra-Cavity Frequency-Doubling of a Nd∶YVO4 Laser Passively Q-Switched with GaAs[J]. Chinese Journal of Lasers, 2005, 32(1): 35 Copy Citation Text show less

    Abstract

    By using GaAs saturable absorber, the running of a diode-pumped Q-switched intra-cavity frequency-doubled Nd∶YVO4/KTP laser is realized. The dependences of pulse width, pulse repetition rate, pulse energy and peak power on pump power are measured with different thickness of GaAs. At 3.22 W of pump power, the laser Q-switched by 300 μm GaAs produces 53.2 ns pulses at a pulse repetition rate of 381 kHz. The pulse energy is 0.18 μJ. The rate equations of intra-cavity frequency-doubling laser Q-switched by GaAs are introduced to analyze the experimental results. The numerical calculations of the rate equations are consistent with the experimental results.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of Intra-Cavity Frequency-Doubling of a Nd∶YVO4 Laser Passively Q-Switched with GaAs[J]. Chinese Journal of Lasers, 2005, 32(1): 35
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