• Optoelectronics Letters
  • Vol. 10, Issue 4, 250 (2014)
Gui-chu CHEN1、2、* and Guang-han FAN2
Author Affiliations
  • 1Department of Electronic Information, Zhao Qing University, Zhaoqing 526061, China
  • 2Institute of Optoelectronic Material and Technology, South China Normal University,Guangzhou 510631, China
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    DOI: 10.1007/s11801-014-4033-7 Cite this Article
    CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. Optoelectronics Letters, 2014, 10(4): 250 Copy Citation Text show less
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    CLP Journals

    [1] XU Ming-sheng, ZHANG Heng, ZHOU Quan-bin, WANG Hong. Effects of p-type GaN thickness on optical properties of GaN-based light-emitting diodes[J]. Optoelectronics Letters, 2016, 12(4): 249

    [2] SANG Wei-hua, LIN Lu, WANG Long, MIN Jia-hua, ZHU Jian-jun, WANG Min-rui. GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography[J]. Optoelectronics Letters, 2016, 12(3): 178

    CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. Optoelectronics Letters, 2014, 10(4): 250
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