• Chinese Journal of Lasers
  • Vol. 16, Issue 7, 402 (1989)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Channeled-mesa substrate three-segmented large optical cavity structure semiconductor lasers[J]. Chinese Journal of Lasers, 1989, 16(7): 402 Copy Citation Text show less
    References

    [1] R. J. Fu et al., Appl. Phys. Lett., 45(7) , 716 (1984)

    [2] D. Botez, Appl. Phys. Lett., 36(3), 190(1980)

    [3] К. H;;mada et al., IEΕΕ J. Quant. Electr., QE-21(6), 623(1985)

    [4] Y. Suzuki et al., Electron. Lett., 20(9), 3S3(1984)

    [5] H. Blauveit et al., Appl. Phys. Lett., 40(12), 1029(1982)

    [6] H. C. Casey, Jr., Μ. B. Panish, Heterostructure Lasers (Academic Press, New York, 1978), p. 183

    [7] K. Funakoshi et al., J. Crystal Growth, 45, 252 (1978)

    [8] D. Botez, J. Crystal Growth, 70, 100(1984)

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Channeled-mesa substrate three-segmented large optical cavity structure semiconductor lasers[J]. Chinese Journal of Lasers, 1989, 16(7): 402
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