Chang Rao, Zeyuan Fei, Weiqu Chen, Zimin Chen, Xing Lu, Gang Wang, Xinzhong Wang, Jun Liang, Yanli Pei. Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectroscopy[J]. Chinese Physics B, 2020, 29(9):
- Chinese Physics B
- Vol. 29, Issue 9, (2020)
Fig. 1. (a) The XRD pattern of the Ga2O3 thin film on c -axis sapphire substrate and (b) the rocking curve for the (004) plane.
Fig. 2. Cross-sectional SEM image of the ε -Ga2O3 thin film on sapphire.
Fig. 3. The transmission spectrum of the Ga2O3 thin film on c -axis sapphire substrate. The inset shows the optical bandgap calculation procedure.
Fig. 4. (a) The XRD pattern and (b) transmittance spectra of the SnO thin film on glass. (c) The XRD pattern of the NiO thin film on glass, (d) the transmittance spectra of the NiO thin film on sapphire. The insets of (c) and (d) show their optical bandgaps.
Fig. 5. High resolution XPS spectra of sample 1, it shows the Ga 2p CL and VBM.
Fig. 6. High resolution XPS spectra for (a) sample 2 and (b) sample 3. (c) Schematic diagram for band alignment of the SnO/ε -Ga2O3 interface.
Fig. 7. High resolution XPS spectra for (a) sample 4 and (b) sample 5. (c) Schematic diagram for band alignment of the NiO/ε -Ga2O3 interface.
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Table 1. The samples.
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Table 2. Summarize of calculation results.
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