[1] Huang K H,Yu J G,Kuo C P,et al.Twofold efficiency improvement in high performance AlGaInP light emit-ing diodes in the 555～620 nm spectral region using a thick GaP window layer.Appl Phys Lett,1992,61(9):1045～1047

[2] Sugawara H,Itaya K,et al.High-brightness InGaAlP green light-emitting diodes.Appl Phys Lett,1992,61(9):1775～1777

[3] Nakmura S,Mukai T,Senoh M.Double-heterostructure blue light-emitting diode.Appl Phys Lett,1994,64(13):1687～1689

[4] Cao D S,Kimball K W,Stringfellow G B.Atmospheric pressure organometallic vapor-phase epitaxial growth of (AlxGa1-x)0.51In0.49P using trimethyl alkyls.Journal of Appl Phys,1990,67(2):739～744

[5] Bour D P,Shealy J R,Wicks G W,et al.Appl Phys Lett,1987,50:655～657

[6] Casey H G.Laser of heterostructure(Book 1).Beijing:Press of National Defence Industry,1983.206

[7] Kish F A,Steranka F M,Defevere D C,et al.Very high-efficiency semiconductor wafer-bonded transportion su-bstrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes.Appl Phys Lett,1994,64(21):2839～2841