Photovoltaic cell performance determined by its parameters is of vital importance for laser wireless power transmission system. The output characteristics of single crystal silicon photovoltaic cell illuminated by diode laser operating at 940 nm are investigated. The relationship between output characteristics and two factors, i.e. laser intensity and temperature, are studied. The results indicate that with the increasing of laser intensity, short-circuit current increases linearly in low intensity levels and then begins to saturate. Both open-circuit voltage and efficiency has a maximum value with increasing laser intensity. The experimental maximum efficiency of photovoltaic cell at 293 K is 29.49%. In the range of 283 K~308 K, short-circuit current is independent of temperature in low intensity levels and decreases linearly in high intensity levels. Open-circuit voltage and efficiency decrease linearly with increasing temperature. However, their temperature coefficients vary with the variation in laser intensity. The relationship between series resistance and efficiency is also simulated. It shows that small series resistance and the reduction of recombination for photovoltaic cell are essential for efficient energy conversion under high intensity laser illumination.