X-ray photoelectron spectroscopy of Ge1-xCx thin films prepared by RLVIP technique

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Optics and Precision Engineering >Volume 16 >Issue 4 >Page 565 > Article

Optics and Precision Engineering
Vol. 16, Issue 4, 565 (2008)

X-ray photoelectron spectroscopy of Ge1-xCx thin films prepared by RLVIP technique

^1,2, ¹, ¹, ¹..., ¹, ¹ and ^1,2|Show fewer author(s)

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. X-ray photoelectron spectroscopy of Ge1-xCx thin films prepared by RLVIP technique[J]. Optics and Precision Engineering, 2008, 16(4): 565 Copy Citation Text

show less

References

[1] LETTINGTON A H,WORT C J H,MONACHAN B C.Development and IR applications of GeC thin films[J].SPIE,1989,1112:156-161.

[2] MACKOWSKI J M,CIMMA B,PIGNARD R.Rain erosion behavior of germanium carbide films grown on Ge Substrates[J].SPIE,1992,1760:201-209.

[6] KUMAR S,TRODAHL H J.Thin films of amorphous germanium-carbon and germanium-nitrogen alloys prepared by activated reactive evaporation[J].Thin Solid Films,1990,193-194:72-76.

[7] VILCARROMERO J,MARQUES F C.XPS study of the chemical bonding in hydrogenated amorphous germanium -carbon alloys[J].Applied Physics A,2000,70:581-585.

[9] MOLL E,PLKER H K,HAAG W.United States,4,619,748[P].1986-10-28.

[10] VILCARROMERO J,MARQUES F C.ANDREU J.Bonding properties of rf-co-sputtering amorphous Ge-C films studied by X-ray photoelectron and Raman spectroseopies[J].Non-crystalline Solids,1998,227-230:427-431.

Download Citation

Save the article for my favorites

Paper Information

微信扫一扫：分享

微信扫一扫：分享