Wafer-scale synthesis of two-dimensional materials for integrated electronics

Zijia Liu; Xunguo Gong; Jinran Cheng; Lei Shao; Chunshui Wang; Jian Jiang; Ruiqing Cheng; Jun He

doi:10.1016/j.chip.2023.100080

[1] C.A. Mack. Fifty years of Moore’s law.

[2] M. Ieong, B. Doris, J. Kedzierski, K. Rim, M. Yang. Silicon device scaling to the sub-10-nm regime.

[3] I. Myeong, I. Song, M.J. Kang, H. Shin. Self-heating and electrothermal properties of advanced sub-5-nm node nanoplate FET.

[4] M. Si, et al.. Scaled indium oxide transistors fabricated using atomic layer deposition.

[5] W. Cao, J. Kang, D. Sarkar, W. Liu, K. Banerjee. 2D semiconductor FETs-projections and design for sub-10 nm VLSI.

[6] M.-Y. Li, S.-K. Su, H.-S.P. Wong, L.-J. Li. How 2D semiconductors could extend Moore’s law.

[7] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-layer MoS2 transistors.

[8] A.D. Bartolomeo, et al.. Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics.

[9] M.-K. Song, et al.. Physically transient field-effect transistors based on black phosphorus.

[10] X. Ren, et al.. Gate-tuned insulator–metal transition in electrolyte-gated transistors based on tellurene.

[11] F. Wu, et al.. Vertical MoS2 transistors with sub-1-nm gate lengths.

[12] X. Liu, et al.. MoS2 negative-capacitance field-effect transistors with subthreshold swing below the physics limit.

[13] L. Li, et al.. Room-temperature valleytronic transistor.

[14] S.B. Desai, et al.. MoS2 transistors with 1-nanometer gate lengths.

[15] Z. Chen, et al.. Direct growth of wafer-scale highly oriented graphene on sapphire.

[16] Y. Hao, et al.. Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene.

[17] J. Wang, et al.. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire.

[18] S. Najmaei, et al.. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.

[19] D. Zhan, et al.. Engineering the electronic structure of graphene.

[20] Y. Cao, et al.. Unconventional superconductivity in magic-angle graphene superlattices.

[21] H. Zeng, J. Dai, W. Yao, D. Xiao, X. Cui. Valley polarization in MoS2 monolayers by optical pumping.

[22] K. Xu, et al.. Atomic-layer triangular WSe2 sheets: synthesis and layer-dependent photoluminescence property.

[23] C.R. Dean, et al.. Boron nitride substrates for high-quality graphene electronics.

[24] L. Ci, et al.. Atomic layers of hybridized boron nitride and graphene domains.

[25] N. Mishra, et al.. Wafer-scale synthesis of graphene on sapphire: toward fab-compatible graphene.

[26] X. Xu, et al.. Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil.

[27] V.L. Nguyen, et al.. Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation.

[28] D.R. Hickey, et al.. Illuminating invisible grain boundaries in coalesced single-orientation WS2 monolayer films.

[29] M. Chubarov, et al.. Wafer-scale epitaxial growth of unidirectional WS2 monolayers on sapphire.

[30] X. Xu, et al.. Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2.

[31] V.L. Nguyen, et al.. Wafer-scale single-crystalline AB-stacked bilayer graphene.

[32] D. Berman, et al.. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale.

[33] O.J. Burton, et al.. Integrated wafer scale growth of single crystal metal films and high quality graphene.

[34] H. Yu, et al.. Wafer-scale growth and transfer of highly-oriented monolayer MoS2 continuous films.

[35] T. Li, et al.. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire.

[36] P. Yang, et al.. Epitaxial growth of centimeter-scale single-crystal MoS2 monolayer on Au (111).

[37] A.B. Hamlin, S.A. Agnew, J.C. Bonner, J.W.P. Hsu, W.J. Scheideler. Heterojunction transistors printed via instantaneous oxidation of liquid metals.

[38] J. Shim, et al.. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials.

[39] X. Xu, et al.. Millimeter-scale single-crystalline semiconducting MoTe2 via solid-to-solid phase transformation.

[40] Y. Zhang, L. Zhang, C. Zhou. Review of chemical vapor deposition of graphene and related applications.

[41] C. Hu, et al.. Wafer-scale sulfur vacancy-rich monolayer MoS2 for massive hydrogen production.

[42] A. Goswami, et al.. Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition.

[43] L.A. Walsh, C.L. Hinkle. van der Waals epitaxy: 2D materials and topological insulators.

[44] W. Jeon, Y. Cho, S. Jo, J.-H. Ahn, S.-J. Jeong. Wafer-scale synthesis of reliable high-mobility molybdenum disulfide thin films via inhibitor-utilizing atomic layer deposition.

[45] Y. Kim, et al.. Atomic-layer-deposition-based 2D transition metal chalcogenides: synthesis, modulation, and applications.

[46] K.S. Novoselov, et al.. Electric field effect in atomically thin carbon films.

[47] A. Laturia, M.L. Van de Put, W.G. Vandenberghe. Author Correction: Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk.

[48] V. Oestreicher, C. Dolle, D. Hunt, M. Fickert, G. Abellán. Room temperature synthesis of two-dimensional multilayer magnets based on α-CoII layered hydroxides.

[49] S. Chae, et al.. Lattice transparency of graphene.

[50] A. King, G. Johnson, D. Engelberg, W. Ludwig, J. Marrow. Observations of intergranular stress corrosion cracking in a grain-mapped polycrystal.

[51] S. Scarfe, W. Cui, A. Luican-Mayer, J.-M. Ménard. Systematic THz study of the substrate effect in limiting the mobility of graphene.

[52] P. Ares, K.S. Novoselov. Recent advances in graphene and other 2D materials.

[53] Y. Abate, et al.. Recent progress on stability and passivation of black phosphorus.

[54] L. Zhang, et al.. Synthesis techniques, optoelectronic properties, and broadband photodetection of thin-film black phosphorus.

[55] H. Liu, et al.. Phosphorene: an unexplored 2D semiconductor with a high hole mobility.

[56] X. Duan, C. Wang, A. Pan, R. Yu, X. Duan. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.

[57] K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz. Atomically thin MoS2: a new direct-gap semiconductor.

[58] H.-J. Kim, S.-H. Kang, I. Hamada, Y.-W. Son. Origins of the structural phase transitions in MoTe2 and WTe2.

[59] C.-H. Lee, et al.. Tungsten Ditelluride: a layered semimetal.

[60] X. Qian, J. Liu, L. Fu, J. Li. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides.

[61] C. Heikes, et al.. Mechanical control of crystal symmetry and superconductivity in Weyl semimetal MoTe2.

[62] K.F. Mak, K.L. McGill, J. Park, P.L. McEuen. The valley Hall effect in MoS2 transistors.

[63] J.T. Ye, et al.. Superconducting dome in a gate-tuned band insulator.

[64] M. Naguib, et al.. Two-dimensional nanocrystals produced by exfoliation of Ti3AlC2.

[65] Y. Liu, H. Xiao, W.A. Goddard III. Schottky-Barrier-Free contacts with two-dimensional semiconductors by surface-engineered MXenes.

[66] C. Zhang, et al.. Transparent, flexible, and conductive 2D titanium carbide (MXene) films with high volumetric capacitance.

[67] C. Cui, et al.. Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

[68] W. Ding, et al.. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials.

[69] Y. Zhou, et al.. Out-of-Plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes.

[70] S. Song, et al.. Wafer-scale growth of two-dimensional, phase-pure InSe.

[71] J. Chen, et al.. Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric.

[72] S. Roy, et al.. Structure, properties and applications of two-dimensional hexagonal boron nitride.

[73] A.S. Mayorov, et al.. Micrometer-scale ballistic transport in encapsulated graphene at room temperature.

[74] L. Britnell, et al.. Electron tunneling through ultrathin boron nitride crystalline barriers.

[75] Y. Chen, et al.. Ga2O3-Based solar-blind position-sensitive detector for noncontact measurement and optoelectronic demodulation.

[76] C. Jin, et al.. Artificial vision adaption mimicked by an optoelectrical In2O3 transistor array.

[77] C.-H. Huang, et al.. Multiple-state nonvolatile memory based on ultrathin indium oxide film via liquid metal printing.

[78] Z. Lin, et al.. Nanometer-thick oxide semiconductor transistor with ultra-high drain current.

[79] H. Faber, et al.. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

[80] X. Feng, et al.. Two-dimensional oxide crystals for device applications: challenges and opportunities.

[81] A. Zavabeti, et al.. A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides.

[82] Y. Ye, A.B. Hamlin, J.E. Huddy, M.S. Rahman, W.J. Scheideler. Continuous liquid metal printed 2D transparent conductive oxide superlattices.

[83] M. Bender, et al.. Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness.

[84] H. Faber, et al.. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis.

[85] R.S. Datta, et al.. Flexible two-dimensional indium tin oxide fabricated using a liquid metal printing technique.

[86] B. Du, Q. Li, X. Meng, J. Liu. Liquid Ga–in–Sn alloy printing of GaInSnO ultrathin semiconductor films and controllable performance field effect transistors.

[87] Q. Li, B.-D. Du, J.-Y. Gao, J. Liu. Liquid metal gallium-based printing of Cu-doped p-type Ga2O3 semiconductor and Ga2O3 homojunction diodes.

[88] N. Syed, et al.. Printing two-dimensional gallium phosphate out of liquid metal.

[89] M. Wurdack, et al.. Ultrathin Ga2O3 glass: a large-scale passivation and protection material for monolayer WS2.

[90] Y. Zhang, Y.-W. Tan, H.L. Stormer, P. Kim. Experimental observation of the quantum Hall effect and Berry’s phase in graphene.

[91] Y. Huang, et al.. Universal mechanical exfoliation of large-area 2D crystals.

[92] J.-Y. Moon, et al.. Layer-engineered atomic-scale spalling of 2D van der Waals crystals.

[93] Y. Sun, Y. Sun, R. Wang, K. Liu. Probing the interlayer mechanical coupling of 2D layered materials - a review.

[94] L. Yin, et al.. Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices.

[95] Q. Ji, Y. Zhang, Y. Zhang, Z. Liu. Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline.

[96] R. Cheng, et al.. Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors.

[97] G. Xue, et al.. Modularized batch production of 12-inch transition metal dichalcogenides by local element supply.

[98] Y. Xia, et al.. 12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture.

[99] A. Aljarb, et al.. Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides.

[100] K.Y. Ma, et al.. Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111).

[101] J. Li, et al.. Wafer-scale single-crystal monolayer graphene grown on sapphire substrate.

[102] L. Wang, et al.. Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper.

[103] T.-A. Chen, et al.. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111).

[104] J.-H. Fu, et al.. Oriented lateral growth of two-dimensional materials on c-plane sapphire.

[105] S.M. Eichfeld, et al.. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition.

[106] J.-H. Park, et al.. Synthesis of high-performance monolayer molybdenum disulfide at low temperature.

[107] A. Cohen, et al.. Growth-etch Metal−Organic chemical vapor deposition approach of WS2 atomic layers.

[108] J. Zhu, et al.. Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform.

[109] M. Lee, et al.. Wafer-scale δ waveguides for integrated two-dimensional photonics.

[110] A.T. Hoang, et al.. Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics.

[111] T.H. Bointon, M.D. Barnes, S. Russo, M.F. Craciun. High quality monolayer graphene synthesized by resistive heating cold wall chemical vapor deposition.

[112] K. Jia, et al.. Superclean growth of graphene using a cold-wall chemical vapor deposition approach.

[113] M. Seol, et al.. High-throughput growth of wafer-scale monolayer transition metal dichalcogenide via vertical ostwald ripening.

[114] K. Jia, et al.. Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach.

[115] S. Song, et al.. Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit.

[116] J.C. Park, et al.. Phase-Engineered synthesis of centimeter-scale 1T’- and 2H-molybdenum ditelluride thin films.

[117] L. Zhou, et al.. Large-area synthesis of high-quality uniform few-layer MoTe2.

[118] Y. Pan, et al.. Heteroepitaxy of semiconducting 2H-MoTe2 thin films on arbitrary surfaces for large-scale heterogeneous integration.

[119] L. Zeng, et al.. Van der Waals epitaxial growth of mosaic-like 2D platinum ditelluride layers for room-temperature mid-infrared photodetection up to 10.6 μm.

[120] Z. Ahmadi, B. Yakupoglu, N. Azam, S. Elafandi, M. Mahjouri-Samani. Application of lasers in the synthesis and processing of two-dimensional quantum materials.

[121] M.M. Juvaid, et al.. Direct growth of wafer-scale, transparent, p type reduced-graphene-oxide-like thin films by pulsed laser deposition.

[122] M.I. Serna, et al.. Large-area deposition of MoS2 by pulsed laser deposition with in situ thickness control.

[123] S. Jaiswal, et al.. Wafer-scale synthesis of 2D materials by an amorphous phase-mediated crystallization approach.

[124] Z. Wu, et al.. Large-scale growth of few-layer two-dimensional black phosphorus.

[125] H. Han, et al.. Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels.

[126] M. Reddy, et al.. Demonstration of high-quality MBE HgCdTe on 8-inch wafers.

[127] D. S.H. Liu, M. Hilse, A.R. Lupini, J.M. Redwing, R. Engel-Herbert. Growth of nanometer-thick γ-InSe on Si (111) 7 × 7 by molecular beam epitaxy for field-effect transistors and optoelectronic devices.

[128] H. Wang, et al.. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature.

[129] Y. Xia, et al.. Wafer-scale single-crystalline MoSe2 and WSe2 monolayers grown by molecular-beam epitaxy at low-temperature — the role of island-substrate interaction and surface steps.

[130] Z. Li, et al.. Low-pass filters based on van der Waals ferromagnets.

[131] Y. Liu, et al.. Pair density wave state in a monolayer high-Tc iron-based superconductor.

[132] Y. Song, et al.. Signatures of the exciton gas phase and its condensation in monolayer 1T-ZrTe2.

[133] Q. He, et al.. Molecular beam epitaxy scalable growth of wafer-scale continuous semiconducting monolayer MoTe2 on inert amorphous dielectrics.

[134] D. Fu, et al.. Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride.

[135] W. Hao, C. Marichy, C. Journet. Atomic layer deposition of stable 2D materials.

[136] H. Yang, et al.. Wafer-scale synthesis of WS2 films with in situ controllable p-type doping by atomic layer deposition.

[137] C. Kim, et al.. Atomic layer deposition route to scalable, electronic-grade van der Waals Te thin films.

[138] D.H. Kim, et al.. Wafer-scale growth of a MoS2 monolayer via one cycle of atomic layer deposition: an adsorbate control method.

[139] X. Guo, et al.. Modulated wafer-scale WS2 films based on atomic-layer-deposition for various device applications.

[140] C. Liu, et al.. Two-dimensional materials for next-generation computing technologies.

[141] H.G. Kim, H.-B.-R. Lee. Atomic layer deposition on 2D materials.

[142] Z. Lu, et al.. Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration.

[143] W. Li, et al.. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices.

[144] H. Yang, et al.. Growth mechanisms and morphology engineering of atomic layer-deposited WS2.

[145] R. Pendurthi, et al.. Heterogeneous integration of atomically thin semiconductors for non-von Neumann CMOS.

[146] J. Huang, et al.. Flexible, transparent, and wafer-scale artificial synapse array based on TiOx/Ti3C2Tx film for neuromorphic computing.

[147] S. Li, et al.. Wafer-scale 2D hafnium diselenide based memristor crossbar array for energy-efficient neural network hardware.

[148] L. Yin, et al.. High-performance memristors based on ultrathin 2D copper chalcogenides.

[149] A. Vyas, et al.. Alkyl-amino functionalized reduced-graphene-oxide–heptadecan-9-amine-based spin-coated microsupercapacitors for on-chip low power electronics.

[150] J. Lu, et al.. Ultrabroadband imaging based on wafer-scale tellurene.

[151] J. Hei, et al.. Wafer-scale patterning synthesis of two-dimensional WSe2 layers by direct selenization for highly sensitive van der Waals heterojunction broadband photodetectors.

[152] Y. Huang, et al.. Wafer-scale self-assembled 2.5D metasurface for efficient near-field and far-field electromagnetic manipulation.

[153] Y. Liu, et al.. Promises and prospects of two-dimensional transistors.

[154] H. Zeng, et al.. Recent developments in CVD growth and applications of 2D transition metal dichalcogenides.

[155] J. Tang, et al.. Low power flexible monolayer MoS2 integrated circuits.

[156] Y.A. Kwon, et al.. Wafer-scale transistor arrays fabricated using slot-die printing of molybdenum disulfide and sodium-embedded alumina.

[157] Y. Xu, et al.. Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors.

[158] E. Reato, et al.. Zero-bias power-detector circuits based on MoS2 field-effect transistors on wafer-scale flexible substrates.

[159] C. Tan, et al.. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide.

[160] W. Han, et al.. Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction.

[161] P. Zhuang, et al.. Large-area multilayer molybdenum disulfide for 2D memristors.

[162] H. Xu, et al.. Super-capacitive capabilities of wafer-scaled two-dimensional SnO2-Ga2O3 n-p heterostructures fabricated by atomic layer deposition.

[163] Y.S. Cho, et al.. Electronic and electrocatalytic applications based on solution-processed two-dimensional platinum diselenide with thickness-dependent electronic properties.

[164] J. Dong, et al.. Electrocatalytic microdevice array based on wafer-scale conductive metal-organic framework thin film for massive hydrogen production.

[165] M. Patel, T.T. Nguyen, J. Kim, J. Kim, Y.K. Kim. WS2/p-Si-based photocathodes with high activity originated from the unique vertical geometry of the 2D WS2 nanoplatelets.

[166] M. Liu, et al.. Two-dimensional covalent organic framework films prepared on various substrates through vapor induced conversion.

[167] A. Purwidyantri, et al.. Integrated approach from sample-to-answer for grapevine varietal identification on a portable graphene sensor chip.

[168] B. Lin, et al.. Centimeter-scale two-dimensional metallenes for high-efficiency electrocatalysis and sensing.

[169] D. Yang, et al.. Precursor customized assembly of wafer-scale polymerized aniline thin films for ultrasensitive NH3 detection.

[170] J.-H. Choi, et al.. A strategy for wafer-scale crystalline MoS2 thin films with controlled morphology using pulsed metal–organic chemical vapor deposition at low temperature.

[171] D. Wu, et al.. Wafer-scale synthesis of wide bandgap 2D GeSe2 layers for self-powered ultrasensitive UV photodetection and imaging.

[172] D. Wu, et al.. Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection.

[173] S. Hwangbo, L. Hu, A.T. Hoang, J.Y. Choi, J.-H. Ahn. Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor.

[174] J. Shin, et al.. Vertical full-colour micro-LEDs via 2D materials-based layer transfer.

[175] H.-S. Zhang, et al.. Co-assembled perylene/graphene oxide photosensitive heterobilayer for efficient neuromorphics.

[176] X. Gao, et al.. Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation.

[177] E. Okogbue, S.A. Mofid, C. Yoo, S.S. Han, Y. Jung. Soft biomorph actuators enabled by wafer-scale ultrathin 2D PtTe2 layers.

[178] Y. Ou, et al.. ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics.

[179] S. Liu, et al.. Tuning 2D magnetism in Fe3+XGeTe2 films by element doping.

[180] R. Cheng, et al.. High-performance, multifunctional devices based on asymmetric van der Waals heterostructures.

[181] D.L. Duong, S.J. Yun, Y.H. Lee. Van der Waals layered materials: opportunities and challenges.

[182] M. Wang, et al.. Single-crystal, large-area, fold-free monolayer graphene.

[183] U. Lee, et al.. Facile morphological qualification of transferred graphene by phase-shifting interferometry.

[184] R.W. Havener, et al.. High-throughput graphene imaging on arbitrary substrates with widefield Raman spectroscopy.

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