Fabrication of nc-Si/SiO2 structure by thermal oxidation method and its luminescence characteristics

Haojie Zhang; Longzhi Lin; Shaoji Jiang

doi:10.3788/COL20090704.0332

Journals >Chinese Optics Letters >Volume 7 >Issue 4 >Page 04332 > Article

Chinese Optics Letters
Vol. 7, Issue 4, 04332 (2009)

Fabrication of nc-Si/SiO2 structure by thermal oxidation method and its luminescence characteristics

Haojie Zhang, Longzhi Lin, and Shaoji Jiang

Author Affiliations

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275E-mail: stsjsj@mail.sysu.edu.cn

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DOI: 10.3788/COL20090704.0332 Cite this Article Set citation alerts

Haojie Zhang, Longzhi Lin, Shaoji Jiang. Fabrication of nc-Si/SiO2 structure by thermal oxidation method and its luminescence characteristics[J]. Chinese Optics Letters, 2009, 7(4): 04332 Copy Citation Text

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Haojie Zhang, Longzhi Lin, Shaoji Jiang. Fabrication of nc-Si/SiO2 structure by thermal oxidation method and its luminescence characteristics[J]. Chinese Optics Letters, 2009, 7(4): 04332

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