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    Journals >Journal of Synthetic Crystals >Volume 49 >Issue 11 >Page 2178 > Article
    • Journal of Synthetic Crystals
    • Vol. 49, Issue 11, 2178 (2020)
    Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate
    YUAN Ziyuan1,*, PAN Rui1, XIA Shunji1, WEI Lian1..., YE Jiajia1, LI Chen1, CHEN Yanfeng1 and LU Hong1,2|Show fewer author(s)
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    YUAN Ziyuan, PAN Rui, XIA Shunji, WEI Lian, YE Jiajia, LI Chen, CHEN Yanfeng, LU Hong. Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate[J]. Journal of Synthetic Crystals, 2020, 49(11): 2178 Copy Citation Text show less

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    High quality heteroepitaxy is the key to realize high performance microelectronic devices. In this work, Si1-xGex (0

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    YUAN Ziyuan, PAN Rui, XIA Shunji, WEI Lian, YE Jiajia, LI Chen, CHEN Yanfeng, LU Hong. Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate[J]. Journal of Synthetic Crystals, 2020, 49(11): 2178
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