Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 25 >Issue 1 >Page 1 > Article

Chinese Journal of Lasers
Vol. 25, Issue 1, 1 (1998)

Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers

[in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 1 Copy Citation Text

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Abstract

The calculated results of the gain, threshold current density and its temperature dependence of InGaN QW lasers based on the available parameters are presented in this paper. The threshold current density of nitride blue and green QW lasers is more than five times higher than that of GaAs QW lasers, but their characteristic temperature can be raised up to 500 K.

Keywords

gain calculation threshold current InGaN quantum well laser

[in Chinese], [in Chinese], [in Chinese]. Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 1

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