• Chinese Journal of Lasers
  • Vol. 37, Issue 9, 2278 (2010)
Dong Jun* and Ma Jian
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/cjl20103709.2278 Cite this Article Set citation alerts
    Dong Jun, Ma Jian. Advances in Passively Q-Switched Yb3+-Doped Laser Materials Microchip Solid-State Lasers[J]. Chinese Journal of Lasers, 2010, 37(9): 2278 Copy Citation Text show less

    Abstract

    Laser-diode pumped passively Q-switched solid-state lasers,with compact configuration,excellent beam quality owing to good match-up of pump and laser light,easy to achieve sub-nanosecond pulse width and high peak power, have widely applications in laser processing,telecommunications,surgery,biology,material microstructure analysis and so on.In the past decade,dramatic progresses have been made in passively Q-switched solid-state lasers based on ytterbium doped laser material and saturable absorber such as Cr4+:YAG,semiconductor saturable absorber mirror (SESAM).Passively Q-switched Yb3+ doped solid-state lasers have achieved not only the same high peak power output,but also with better efficiency and flexible designs.The progresses and future work on passively Q-switched Yb3+ doped laser materials microchip lasers have been overviewed.
    Dong Jun, Ma Jian. Advances in Passively Q-Switched Yb3+-Doped Laser Materials Microchip Solid-State Lasers[J]. Chinese Journal of Lasers, 2010, 37(9): 2278
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