Infrared Upconversion Efficiency of Electron-trapping Thin Film CaS∶Eu, Sm

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 27 >Issue 3 >Page 257 > Article

Chinese Journal of Lasers
Vol. 27, Issue 3, 257 (2000)

Infrared Upconversion Efficiency of Electron-trapping Thin Film CaS∶Eu, Sm

[in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Infrared Upconversion Efficiency of Electron-trapping Thin Film CaS∶Eu, Sm[J]. Chinese Journal of Lasers, 2000, 27(3): 257 Copy Citation Text

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References

[1] J. Lindmayer. A new erasable optical memory. Solid State Technology, 1988, 31(8):135～138

[2] S. Jutamulia, G. M. Storti, W. Seiderman et al.. Use of electron-trapping materials in optical signal processing. ⅠⅤ: Parallel incoherent image subtraction. Appl. Opt., 1993, 32(5):743～745

[3] Z. Wen, N. H. Farhat, Z. J. Zhao. Dynamics of electron-trapping materials for use in optoelectronic neurocomputing. Appl. Opt., 1993, 32(35):7251～7265

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