Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells

Jun Chen; Guanghan Fan; Wei Pang; Shuwen Zheng; Yunyan Zhang

doi:10.3788/col201210.062302

Journals >Chinese Optics Letters >Volume 10 >Issue 6 >Page 062302 > Article

Chinese Optics Letters
Vol. 10, Issue 6, 062302 (2012)

Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells

Jun Chen, Guanghan Fan, Wei Pang, Shuwen Zheng, and Yunyan Zhang

DOI: 10.3788/col201210.062302 Cite this Article Set citation alerts

Jun Chen, Guanghan Fan, Wei Pang, Shuwen Zheng, Yunyan Zhang. Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells[J]. Chinese Optics Letters, 2012, 10(6): 062302 Copy Citation Text

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