• Optoelectronic Technology
  • Vol. 43, Issue 4, 293 (2023)
Yanxue HAO, Gengxu CHEN, and Tailiang GUO
Author Affiliations
  • College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108,CHN
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    DOI: 10.19453/j.cnki.1005-488x.2023.04.003 Cite this Article
    Yanxue HAO, Gengxu CHEN, Tailiang GUO. Thin Film Transistor Based on Graphene Heterojunction Regulated by Femtosecond Laser[J]. Optoelectronic Technology, 2023, 43(4): 293 Copy Citation Text show less
    Schematic of femtosecond laser system processing graphene oxide film
    Fig. 1. Schematic of femtosecond laser system processing graphene oxide film
    Chemical analysis of reduced graphene oxide thin film
    Fig. 2. Chemical analysis of reduced graphene oxide thin film
    The characterization of GHTFT
    Fig. 3. The characterization of GHTFT
    Hysteresis curves of GHTFT under different laser power density
    Fig. 4. Hysteresis curves of GHTFT under different laser power density
    Electrical characteristics of GHTFT at a laser power density of 1.03 kW/cm2
    Fig. 5. Electrical characteristics of GHTFT at a laser power density of 1.03 kW/cm2
    Schematic of working principle of GHTFT
    Fig. 6. Schematic of working principle of GHTFT
    Yanxue HAO, Gengxu CHEN, Tailiang GUO. Thin Film Transistor Based on Graphene Heterojunction Regulated by Femtosecond Laser[J]. Optoelectronic Technology, 2023, 43(4): 293
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