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    Journals >Chinese Optics Letters >Volume 7 >Issue 6 >Page 06489 > Article
    • Chinese Optics Letters
    • Vol. 7, Issue 6, 06489 (2009)
    MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications
    Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, and Xiangang Xu
    Author Affiliations
  • State Key Lab of Crystal Materials, Shandong University, Ji'nan 250100, China
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    DOI: 10.3788/COL20090706.0489 Cite this Article Set citation alerts
    Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu. MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications[J]. Chinese Optics Letters, 2009, 7(6): 06489 Copy Citation Text show less
    Cited By
    Article index updated: Apr. 18, 2023
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    The article is cited by 7 article(s) from Web of Science.
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    Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu. MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications[J]. Chinese Optics Letters, 2009, 7(6): 06489
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