• Chinese Optics Letters
  • Vol. 9, Issue 6, 063202 (2011)
Hong Liu1, Jingli Wang1, Lin Zhang1, Binjie Xin1, Xinmei Wang1、2, and Wei Shi
Author Affiliations
  • 1Applied Physics Department, Xi'an University of Technology, Xi'an 710048, China
  • 2State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
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    DOI: 10.3788/COL201109.063202 Cite this Article Set citation alerts
    Hong Liu, Jingli Wang, Lin Zhang, Binjie Xin, Xinmei Wang, Wei Shi. Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches[J]. Chinese Optics Letters, 2011, 9(6): 063202 Copy Citation Text show less

    Abstract

    Photoconductive semiconductor switches (PCSSs) are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.
    Hong Liu, Jingli Wang, Lin Zhang, Binjie Xin, Xinmei Wang, Wei Shi. Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches[J]. Chinese Optics Letters, 2011, 9(6): 063202
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