Fig. 1. (a) Band structure of the graphene/MoS₂ heterostructure calculated by this paper; (b) the band structure of the graphene/MoS₂ heterostructure calculated by Ref. [38].

Fig. 2. Top view (a) and side view (b) of the graphene/InSe heterostructures. The gray, orange and brown balls are for C, Se and In atoms, respectively.

Fig. 3. (a) Projected band structure of the graphene/InSe heterostructure, where the red and blue lines represent for the energy band of graphene and InSe, respectively; (b) the band structure of graphene; (c) the band structure of monolayer InSe. The Fermi level is set to zero.

Fig. 4. Plane-averaged charge density difference of the graphene/InSe heterostructure. The black vertical dashed line denotes the intermediate position of graphene and InSe.

Fig. 5. Projected band structures of graphene/InSe heterostructures under different external electric fields. The red and blue lines represent for the energy band of graphene and InSe, respectively. The Fermi level is set to zero.

Fig. 6. Evolution of Schottky barriers of the graphene/InSe heterostructurer as a function of external electric field.

Fig. 7. (a) Plane-averaged charge density difference of the graphene/InSe heterostructure under positive external electric fields; (b) the plane-averaged charge density difference of the graphene/InSe heterostructure under negative external electric fields. The black vertical dashed line denotes the intermediate position of graphene and InSe.