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Journals >Chinese Journal of Lasers >Volume 18 >Issue 3 >Page 161 > Article

Chinese Journal of Lasers
Vol. 18, Issue 3, 161 (1991)

Steady state property of dynamic optical bistability in narrow-gap semiconductors

[in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. Steady state property of dynamic optical bistability in narrow-gap semiconductors[J]. Chinese Journal of Lasers, 1991, 18(3): 161 Copy Citation Text

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Abstract

The steady state model of two-photon optical bistability in narrow-gap semiconductors are presented. The steady property of dynamic optical bistability in InSb and HgCdTe are analyzed and the ideal pulse shaping effect is obtained experimentally.

Keywords

narrow-gap semiconductor pulse shaping optical bistability

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[in Chinese], [in Chinese], [in Chinese]. Steady state property of dynamic optical bistability in narrow-gap semiconductors[J]. Chinese Journal of Lasers, 1991, 18(3): 161

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