[2] Fenici P, Frias Rebelo A J, Jones R H, et al. Current status of SiC/SiC composites R&D［J］. Journal of Nuclear Materials, 1998, 258: 215-225.

[4] Sorieul S, Costantini J M, Gosmain L, et al. Study of damage in ion-irradiated α-SiC by optical spectroscopy［J］. Journal of Physics: Condensed Matter, 2006, 18: 8493-8502.

[5] Héliou R, Brebner J L, Roorda S. Optical and structural properties of 6H-SiC implanted with silicon as a function of implantation dose and temperature［J］. Nuclear Instruments and Methods in Physics Research Section B, 2001, 175-177: 268-273.

[6] Wendler E, Bierschenk Th, Felgentrger F, et al. Damage formation and optical absorption in neutron irradiated SiC［J］. Nuclear Instruments and Methods in Physics Research Section B, 2012, 286: 97-101.

[7] Wendler E, Heft A, Zammit U, et al. Sub-gap optical properties of ion implanted SiC［J］. Nuclear Instruments and Methods in Physics Research Section B, 1996, 116: 398-403.

[8] Okada M, Atobe K, Nakagawa M, et al. Irradiation temperature dependence of production efficiency of defects induced in neutron-irradiated silicon carbides［J］. Nuclear Instruments and Methods in Physics Research Section B, 2000, 166-167: 399-403.

[9] Wellmann P J, Bushevoy S, Weingrtner R. Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements［J］. Materials Science and Engineering: B, 2001, 80: 352-356.

[10] Viswanathan E, Katharria Y S, Selvakumar S, et al. Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC［J］. Nuclear Instruments and Methods in Physics Research Section B, 2011, 269: 1103-1107.

[11] Yasuda K, Takeda M, Masuda H, et al. Changes of the band gap of SiC crystals by high energy electron irradiation and annealing［J］. Physica Status Solidi(a), 1982, 71(2): 549-553.

[12] Vali I P, Shetty P K, Mahesha M G, et al. Structural and optical studies of gamma irradiated N-doped 4H-SiC［J］. Nuclear Instruments and Methods in Physics Research Section B, 2019, 440: 101-106.

[13] Calcagno L, Grimaldi M G, Musumeci P. Defect annealing in ion implanted silicon carbide［J］. Journal of Materials Research, 1997, 12(7): 1727-1733.

[14] Ruttensperger B, Krtz G, Müller G, et al. Crystalline-amorphous contrast formation in thermally crystallized SiC［J］. Journal of Non-Crystalline Solids, 1991, 137-138: 635-638.

[16] Snead L L, Zinkle S J, Hay J C, et al. Amorphization of SiC under ion and neutron irradiation［J］. Nuclear Instruments and Methods in Physics Research Section B, 1998, 141: 123-132.

[17] Wang P F, Huang L, Zhu W, et al. Raman scattering of neutron irradiated 6H-SiC［J］. Solid State Communications, 2012, 152(10): 887-890.

[19] Yano T, Miyazaki H, Akiyoshi M, et al. X-ray diffractometry and high-resolution electron microscopy of neutron-irradiated SiC to a fluence of 1.9×1027 n/m2 ［J］. Journal of Nuclear Materials, 1998, 253: 78-86.

[20] Son N T, Chen W M, Lindstrm J L, et al. Carbon-vacancy related defects in 4H- and 6H-SiC［J］. Materials Science and Engineering: B, 1999, 61-62: 202-206.

[21] Chen X D, Fung S, Ling C C, et al. Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC［J］. Journal of Applied Physics, 2003, 94(5): 3004-3010.

[22] Musumeci P, Reitano R, Calcagno L. Relaxation and crystallization of amorphous silicon carbide probed by optical measurements［J］. Philosophical Magazine B, 1997, 76(3): 323-333.

[23] Kawakubo T, Okada M. Electrical and optical properties of neutron-irradiated GaP crystals［J］. Journal of Applied Physics, 1990, 67(6): 3111-3114.