In this paper, we report the successful growth of 0.5BiFeO₃–0.5PbFe0.5Nb0.5O₃/SrTiO₃/Si(001) heterostructure using RF-cathode sputtering in an oxygen atmosphere. The deposited films have been investigated by X-ray diffractometry and spectroscopic ellipsometry (SE). 0.5BiFeO₃–0.5PbFe0.5Nb0.5O₃ films on silicon substrates with a strontium titanate buffer layer are single-phase, polycrystalline with a texture in the 001 direction. The unit cell parameters calculated in the tetragonal approximation were c = 4.005 ± 0.001 Å; a = 3.995 ± 0.001 Å. The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed. Dielectric properties and capacitance-voltage characteristics have been measured. The ellipsometric parameters have been obtained.In this paper, we report the successful growth of 0.5BiFeO₃–0.5PbFe0.5Nb0.5O₃/SrTiO₃/Si(001) heterostructure using RF-cathode sputtering in an oxygen atmosphere. The deposited films have been investigated by X-ray diffractometry and spectroscopic ellipsometry (SE). 0.5BiFeO₃–0.5PbFe0.5Nb0.5O₃ films on silicon substrates with a strontium titanate buffer layer are single-phase, polycrystalline with a texture in the 001 direction. The unit cell parameters calculated in the tetragonal approximation were c = 4.005 ± 0.001 Å; a = 3.995 ± 0.001 Å. The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed. Dielectric properties and capacitance-voltage characteristics have been measured. The ellipsometric parameters have been obtained.