• Acta Photonica Sinica
  • Vol. 47, Issue 8, 831002 (2018)
WU Wen-wen1、*, SHEN Hong-lie1、2, CHEN Jie-yi1, SHANG Hui-rong1, SUN Luan-hong1, GAO Kai1, and LI Yu-fang1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/gzxb20184708.0831002 Cite this Article
    WU Wen-wen, SHEN Hong-lie, CHEN Jie-yi, SHANG Hui-rong, SUN Luan-hong, GAO Kai, LI Yu-fang. The Influence of Mg Doping Amount on the Property of Zn1-xMgxO Buffer Layer and Its Application in Cu(In,Ga)Se2 Solar Cells[J]. Acta Photonica Sinica, 2018, 47(8): 831002 Copy Citation Text show less
    References

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    [2] CHANTANA J. Recentprogress of Cu(In,Ga)Se2 and Cu(In,Ga)(S,Se)2-based solar cells[J]. International Relations of the Asia-Pacific, 2017, 27 (2): 7.

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    [8] NAGHAVI N, SPIERING S, POWALLA M, et al. High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)[J]. Progress in Photovoltaics Research & Applications 2003, 11 (7): 437-443.

    [9] TORNDAHL T, CORONEL E,HULTQVIST A, et al. The effect of Zn1-xMgxO buffer layer deposition temperature on Cu(In,Ga)Se2 solar cells: A study of the buffer/absorber interface[J]. Progress in Photovoltaics Research & Applications, 2009, 17 (2): 115-125.

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    WU Wen-wen, SHEN Hong-lie, CHEN Jie-yi, SHANG Hui-rong, SUN Luan-hong, GAO Kai, LI Yu-fang. The Influence of Mg Doping Amount on the Property of Zn1-xMgxO Buffer Layer and Its Application in Cu(In,Ga)Se2 Solar Cells[J]. Acta Photonica Sinica, 2018, 47(8): 831002
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