M2≤1.14 Diode-pumped Yb:YAG Microchip Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 29 >Issue 11 >Page 961 > Article

Chinese Journal of Lasers
Vol. 29, Issue 11, 961 (2002)

M²≤1.14 Diode-pumped Yb:YAG Microchip Laser

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. M²≤1.14 Diode-pumped Yb:YAG Microchip Laser[J]. Chinese Journal of Lasers, 2002, 29(11): 961 Copy Citation Text

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Abstract

A diode-pumped Yb:YAG microchip laser with good beam quality was presented. At room temperature, 91.5 mW output power at 1.049 μm was obtained with 10 at.-% doped Yb: YAG microchip crystal and 1 W InGaAs diode. The slope efficiency was about 30 % . The M2 values were found to be 1.14 and 1.07 in the vertical and horizontal directions respectively. When the crystal was cooled, 111 mW output power and 40% slope efficiency were obtained.

Keywords

beam quality DPSSL Yb:YAG crystal

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. M²≤1.14 Diode-pumped Yb:YAG Microchip Laser[J]. Chinese Journal of Lasers, 2002, 29(11): 961

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