[2] Fewster P F.Combining high resolution X-ray diffractometry and topography.Appl Cryst,1991,24(2):178～183

[3] van der Sluis p.Determination of strain in epitaxial semiconductor structure by high-resolution X-ray diffraction.Appl Phys,1994,A58(1):129～134

[4] People R,Bean J C.Calculation of critical lager thickness versus lattice mismatch for GexSi1-x/Si strained-layer hetero structures.Appl Phys lett,1985,47(3):322～323

[5] Chu Ryang Wie.High resolution X-ray diffraction characterization of semicondutor structures.Materials Science and Engineering,1994,R13(1):1～54