• Chinese Journal of Lasers
  • Vol. 37, Issue 12, 3127 (2010)
Shang Jie*, Zhang Hui, Cao Minggang, and Zhang Pengxiang
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/cjl20103712.3127 Cite this Article Set citation alerts
    Shang Jie, Zhang Hui, Cao Minggang, Zhang Pengxiang. Preparation of PZT Thin Films and Research of Laser-Induced Thermoelectric Voltage[J]. Chinese Journal of Lasers, 2010, 37(12): 3127 Copy Citation Text show less

    Abstract

    Using pulse laser deposition(PLD) technology, different component x(x=0.03, 0.30, 0.53, 0.80, 0.97) and doped M (atom fraction 3%, M=Na, Sr, Bi, Ce) PZT ferroelectric thin films were successfully prepared on SrTiO3 monocrystalline substrates. The test results of XRD showed that all the thin films were single-phase and highly oriented. But the changes of components and doped elements could affect the crystallinity of thin films in various degrees. Furthermore, laser-induced thermoelectric voltage (LITV) signals were measured clearly in PZT ferroelectric thin films grown on 10° vicinal-cut SrTiO3 monocrystalline substrates. Through researching the influence of components and doped elements on the size of the signal, the maximun LITV signal was found under UV light irradiation of 0.16 J/cm2. For different component PZT ferroelectric thin films, the maximum peak voltage was 60 mV if and only if the component was x=0.03. For different doped Pb(Zr0.53 Ti0.47)O3 ferroelectric thin films, the maximun peak voltage was 61 mV if and only if the doped element was Na, which increased nearly 50% compared with the maximum peak voltage of no doped Pb(Zr0.53Ti0.47)O3 ferroelectric thin films.
    Shang Jie, Zhang Hui, Cao Minggang, Zhang Pengxiang. Preparation of PZT Thin Films and Research of Laser-Induced Thermoelectric Voltage[J]. Chinese Journal of Lasers, 2010, 37(12): 3127
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