Author Affiliations
1Institute of Photoelectronics Thin Film Devices and Technology of Nankai University, Tianjin 300071, China2Key Laboratory of Photoelectronics Thin Film Devices and Technology of Tianjin, Tianjin 300071, China3Engineering Center of Thin Film Photoelectronics Technology of Ministry of Education, Tianjin 300071, China4Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin, Tianjin 300071, Chinashow less
Fig. 1. The effective minority carries lifetime and iVoc of inip samples with various hydrofluoric acid treatment time.
inip结构样品的少子寿命与iVoc随HF处理时间的变化
Fig. 2. The effective minority carrier lifetimes and iVoc of inip samples with different H2 flow rates for hydrogen pretreatment.
inip结构样品的少子寿命与iVoc随等离子体处理过程H2流量的变化
Fig. 3. Effective minori ty carrier lifetime and iVoc of inip samples with different H2 and SiH4 flow rates.
三组不同钝化条件下, 对应inip结构样品的少子寿命与iVoc
Fig. 4. Effective minority carrier lifetime and iVoc of inip samples with different deposition time of passivation layer.
不同钝化层沉积时间对应inip结构样品的少子寿命与iVoc
Fig. 5. Effective minority carrier lifetime and iVoc of inip samples with hydrogen-rich plasma treatment on I/P interfaces and different H2 pretreatment on c-Si surfaces.
采用I/P界面富氢处理以及c-Si表面不同氢预处理时间对应inip结构样品的少子寿命与iVoc
Fig. 6. Light absorption spectra of P-type layers with different H2 flow rates (cut-off absorption wavelength, optical bandgap, thickness, dark conductivity of these layers were included in the inserted table).
不同H2流量下制备的P型掺杂层的光吸收曲线(图中表格给出对应的截止吸收波长、光学带隙、厚度、暗态电导率)
Fig. 7. The effective minority carrier lifetime and iVoc of inip samples with different P-type buffer layers and hydrogen-rich plasma treatments (1# without P-type buffer layer; 2# P-type amorphous silicon as the buffer layer; 3# P-type microcrystalline silicon as the buffer layer; 4# increasing the flow of rich hydrogen treatment of H2, P-type microcrystalline silicon as the buffer layer)(The deposition time of passivation layer is 40 and 35 s in yellow and white areas, respectively).
不同P型缓冲层及富氢等离子体处理微调下, 对应inip结构样品的少子寿命与iVoc(1# 无P型缓冲层; 2# P型非晶硅作为缓冲层; 3# P型微晶硅作为缓冲层; 4# 增加富氢处理的H2流量, P型微晶硅作为缓冲层)(黄色、白色区域钝化层沉积分别为40 和35 s)
Fig. 8. (a) and (b) device-structure, (c) effective minority carrier lifetime and iVoc, (d) J-V characteristics and EQE of planar a-Si:H/c-Si heterojunction cells with (without) passivation improvement.
采用未经钝化改善和钝化改善后的工艺条件制备平面a-Si:H/c-Si异质结太阳电池 (a)和(b)为电池结构示意图; (c)少子寿命与iVoc; (d) J-V特性与EQE
Fig. 9. (a) J-V characteristics and (b) EQE of perovskite/silicon heterojunction tandem solar cell.
钙钛矿/硅异质结叠层太阳电池 (a) J-V曲线; (b)EQE曲线