• Chinese Journal of Lasers
  • Vol. 28, Issue 9, 786 (2001)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Integrated Superluminescent Light Source with Tilted Structure by Using Ridge Waveguide[J]. Chinese Journal of Lasers, 2001, 28(9): 786 Copy Citation Text show less

    Abstract

    In this paper, a new type of 1.5 μm InGaAsP integrated device was fabricated by using the ridge waveguide. The lasing was suppressed successfully without any AR (Anti-Reflection) coating on the output facet. No lasing mode was discovered in the range of measurement. Thus, the superluminescent power was improved significantly. Maximum power 110 mW was obtained.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Integrated Superluminescent Light Source with Tilted Structure by Using Ridge Waveguide[J]. Chinese Journal of Lasers, 2001, 28(9): 786
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