Fig. 1. (a) TEM image of the crystallizing structure in the pure nanosilicon (sample I) and its electron diffraction pattern in the inset; (b) TEM image of the crystallizing structure in the nanosilicon doped with oxygen (sample II) and its electron diffraction pattern in the inset; (c) I-V curves measured on sample II, in which the quantum vibration has been observed under laser irradiation at 633 nm.

Fig. 2. (a) Simulation model structure of the Si nanolayer with Si=O bond on surface; (b) density of states of the Si nanolayer with Si=O bond.

Fig. 3. (a) Simulation model structure of the thinner nanolayer structure (thickness: 0.6 nm) with O doping; (b) density of states in simulating calculation on the thinner nanolayer structure with O doping.

Fig. 4. (a) Density of states of the Si quantum dots passivated with Si—H bonds on surface; (b) density of states of the Si quantum dots doped with the Si—O—Si bond on surface with the OSL effect, in which the inset shows the model structure of the Si quantum dots with the Si—O—Si bond.

Fig. 5. Physical model construction built for interpreting the OSL effect in the localized states according to the results of simulating calculation.