Sergey Olegovich Slipchenko, Aleksandr Aleksandrovich Podoskin, Ilia Vasil'evich Shushkanov, Marina Gennad'evna Rastegaeva, Artem Eduardovich Rizaev, Matvey Igorevich Kondratov, Artem Evgen'evich Grishin, Nikita Aleksandrovich Pikhtin, Timur Anatol'evich Bagaev, Maxim Anatol'evich Ladugin, Aleksandr Anatol'evich Marmalyuk, Vladimir Aleksandrovich Simakov, "Hetero-integrated high-peak-optical-power laser source (940 nm) for time-of-flight sensors," Chin. Opt. Lett. 22, 072501 (2024)
- Chinese Optics Letters
- Vol. 22, Issue 7, 072501 (2024)
Fig. 1. Schematic depiction of the hetero-integrated assembly “laser–heterothyristor switch.”
Fig. 2. Laser pulses obtained for the hetero-integrated assembly “laser–heterothyristor switch” at various operating voltages of the heterothyristor switch. The inset shows the laser pulse width as a function of the operating voltage of the heterothyristor switch.
Fig. 3. Lasing dynamics of the hetero-integrated assembly at an operating voltage of 55 V. (a), (b) Time-resolved near field obtained through linear interpolation of 36 curves measured at 2.7 µm intervals along the x-axis. (c) Measured total output powers of laser pulses, with filled areas indicating contributions from different emitters (LD1 and LD2 shown in Fig. 1 ). (d) Turn-on time distributions along the apertures of different emitters.
Fig. 4. (a) 1–vertical (black) and 2–lateral (blue) far-field divergences at an operating voltage of 55 V. (b) Lasing spectra at operating voltages of 20, 35, 45, and 55 V.
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