• Chinese Journal of Lasers
  • Vol. 20, Issue 4, 264 (1993)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Lead-salt diode laser at 3~5 μm wavelength region[J]. Chinese Journal of Lasers, 1993, 20(4): 264 Copy Citation Text show less

    Abstract

    A Pb0.97Cd0.03S0.9Se0.1diode laser with pulsed operation at up to a temperature of 162 K and a PbS0.53Se0.47 diode laser with CW operation at 28 K have been fabricated by a horizontal unseeded vapor growth technique, self diffusion and mesa stripe-geometry. Their emission wavelengths are 3.22 μm and 5.53 μm respectively. In pulsed operation and CW operation the threshold current density are as low as 143 A/cm2 and 41 A/cm2 at 12 K respectivety.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Lead-salt diode laser at 3~5 μm wavelength region[J]. Chinese Journal of Lasers, 1993, 20(4): 264
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