Zhuodong Liao, Ke Li, Haoran Liu, Xiaofeng Duan, Yongqing Huang, Kai Liu. Avalanche Photodiode with p-down Structure for 100 Gb/s Optical Communication System[J]. Chinese Journal of Lasers, 2022, 49(13): 1306002
- Chinese Journal of Lasers
- Vol. 49, Issue 13, 1306002 (2022)
Fig. 1. Structure of p-down APD with double-mesa. (a) Schematic of cross-sectional view; (b) band diagrams
Fig. 2. Carrier transition time changed with thickness ratio of p-type absorption layer
Fig. 3. Electric field distribution of p-down APD with double-mesa structure at operating bias condition
Fig. 4. Transverse electric field distribution of avalanche layer at operating bias condition obtained from p-down APD with double-mesa structure
Fig. 5. I-V curves of p-down APD with double-mesa structure
Fig. 6. Frequency response curve of p-down APD with double-mesa structure
Fig. 7. Schematic of cross-sectional view of p-down APD with triple-mesa structure
Fig. 8. Electric field distribution of p-down APD with triple-mesa structure at operating bias condition
Fig. 9. Transverse electric field distribution of avalanche layer at operating bias condition obtained from p-down APD with triple-mesa structure
Fig. 10. I-V curves of p-down APDs with two mesa structures
Fig. 11. Frequency response curves of p-down APDs with two mesa structures
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