The ZnSe crystal in the infrared wave band 10.6 μm neighbor transmissibility is 70%, is a suitable substrate for vanadium dioxide thin films used in the laser protection domain. The VO2 thin films are deposited by magnetron sputtering methods, the films and the ZnSe bond not well, the substrate need special clean. The deposit temperature was 450 ℃. The ratio of O2 and Ar is a key parameter, lots of experiments were done between 0.104 and 0.117. The results showed that when the ratio is 0.11, the VO2 is easily deposited. The VO2 content is 51.7%, is higher than films prepared by other methods. The transmittance can be higher than 60% at 10.6 μm.